RN1902,LF(CT

Toshiba Semiconductor and Storage RN1902,LF(CT

Part No:

RN1902,LF(CT

Datasheet:

RN1901-06

Package:

6-TSSOP, SC-88, SOT-363

ROHS:

AINNX NO:

7831776-RN1902,LF(CT

Description:

Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

Products specifications
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Weight
    6.010099mg
  • Collector-Emitter Breakdown Voltage
    50V
  • hFEMin
    50
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Cut Tape (CT)
  • Published
    2014
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    200mW
  • Polarity
    NPN
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    300mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 10mA 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 250μA, 5mA
  • Max Breakdown Voltage
    50V
  • Frequency - Transition
    250MHz
  • Emitter Base Voltage (VEBO)
    10V
  • Resistor - Base (R1)
    10k Ω
  • Continuous Collector Current
    100mA
  • Resistor - Emitter Base (R2)
    10k Ω
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
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