Transistors - Special Purpose
Manufacturer+1
ECCN Code
Ihs Manufacturer
Package Description
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Reach Compliance Code
Configuration
DS Breakdown Voltage-Min
FET Technology
Highest Frequency Band
JESD-30 Code
Number of Terminals
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- EGN21C160I2D
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, I2D, 2 PIN
manufacturer: SUMITOMO ELECTRIC Industries Ltd
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- EGNB090MK
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, MK, 2 PIN
manufacturer: SUMITOMO ELECTRIC Industries Ltd
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- FLM3439-4F
Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN
manufacturer: SUMITOMO ELECTRIC Device Innovations Inc
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- MOQ1
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FLK027XVRF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-4
manufacturer: SUMITOMO ELECTRIC Industries Ltd
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- MOQ1
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- FHX35LG
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, SMT, 4 PIN
manufacturer: SUMITOMO ELECTRIC Industries Ltd
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- MOQ1
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- FLM1213-4F
Description: RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IA, 2 PIN
manufacturer: SUMITOMO ELECTRIC Device Innovations Inc
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- SGFCF10S-DT1
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, PLASTIC, Z2D, 6 PIN
manufacturer: SUMITOMO ELECTRIC Industries Ltd
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- MOQ1
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- FSX017LG
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, 4 PIN
manufacturer: SUMITOMO ELECTRIC Device Innovations Inc
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- FLL177ME
RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE ME, 2 PIN
manufacturer: SUMITOMO ELECTRIC Device Innovations Inc
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FHX45XRF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE
manufacturer: SUMITOMO ELECTRIC Device Innovations Inc
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- MOQ1
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- FLM4450-18F
Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN
manufacturer: SUMITOMO ELECTRIC Device Innovations Inc
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- MOQ1
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- SGK5867-60A
Description: RF Power Field-Effect Transistor,
manufacturer: SUMITOMO ELECTRIC Industries Ltd
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- SGN19C210I2D
Description: RF Power Field-Effect Transistor,
manufacturer: SUMITOMO ELECTRIC Industries Ltd
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