EGNB090M1A
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69253851-EGNB090M1A
Description: Transistor
SGFCF10S-DT1
SUMITOMO ELECTRIC Industries LtdRF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, PLASTIC, Z2D, 6 PINSGN21C105MK
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SUMITOMO ELECTRIC Device Innovations IncDescription: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PINEGNB010MK
SUMITOMO ELECTRIC Industries LtdDescription: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL-CERAMIC PACKAGE-2SGK5867-60A
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SUMITOMO ELECTRIC Industries LtdRF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, PLASTIC, CASE I2C, 7 PIN