All Products
SUMITOMO ELECTRIC Industries Ltd SGN19C210I2D
Part No:
SGN19C210I2D
Manufacturer:
Datasheet:
Package:
-
AINNX NO:
69099726-SGN19C210I2D
Category:
Description:
Description: RF Power Field-Effect Transistor,
Products specifications
- Rohs CodeYes
- Part Life Cycle CodeActive
- Ihs ManufacturerSUMITOMO ELECTRIC INDUSTRIES LTD
- Package Description,
- ECCN CodeEAR99
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
0 Similar Products Remaining
Documents & Media Download datasheets and manufacturer documentation for SUMITOMO ELECTRIC Industries Ltd SGN19C210I2D.
- Datasheets :
Hot Sale
EGNB090M1A
SUMITOMO ELECTRIC Device Innovations IncDescription: TransistorSGN2933-150D-R
SUMITOMO ELECTRIC Industries LtdRF Power Field-Effect Transistor,SGK7785-30A
SUMITOMO ELECTRIC Industries LtdRF Power Field-Effect Transistor,EGN21C160I2D
SUMITOMO ELECTRIC Industries LtdRF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, I2D, 2 PINEGNB090MK
SUMITOMO ELECTRIC Industries LtdRF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, MK, 2 PINSGN21C105MK
SUMITOMO ELECTRIC Industries LtdRF Power Field-Effect Transistor,FHC40LGT
SUMITOMO ELECTRIC Device Innovations IncTransistorFLM3439-4F
SUMITOMO ELECTRIC Device Innovations IncDescription: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN
FLK027XV
SUMITOMO ELECTRIC Industries LtdRF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-4FHX35LG
SUMITOMO ELECTRIC Industries LtdRF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, SMT, 4 PIN