SGFCF10S-DT1

SUMITOMO ELECTRIC Industries Ltd SGFCF10S-DT1

Part No:

SGFCF10S-DT1

Package:

-

AINNX NO:

68723823-SGFCF10S-DT1

Description:

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, PLASTIC, Z2D, 6 PIN

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    6
  • Transistor Element Material
    GALLIUM NITRIDE
  • Exterior Housing Material
    1
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    SUMITOMO ELECTRIC INDUSTRIES LTD
  • Package Description
    SMALL OUTLINE, R-PDSO-N6
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • ECCN Code
    EAR99
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    NO LEAD
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-PDSO-N6
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    DEPLETION MODE
  • Case Connection
    SOURCE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • DS Breakdown Voltage-Min
    160 V
  • FET Technology
    HIGH ELECTRON MOBILITY
  • Highest Frequency Band
    S BAND
0 Similar Products Remaining
Documents & Media Download datasheets and manufacturer documentation for SUMITOMO ELECTRIC Industries Ltd SGFCF10S-DT1.