EGN21C160I2D

SUMITOMO ELECTRIC Industries Ltd EGN21C160I2D

Part No:

EGN21C160I2D

Datasheet:

Package:

-

AINNX NO:

69247074-EGN21C160I2D

Description:

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, I2D, 2 PIN

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    2
  • Transistor Element Material
    GALLIUM NITRIDE
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    SUMITOMO ELECTRIC INDUSTRIES LTD
  • Package Description
    FLANGE MOUNT, R-CDFM-F2
  • Number of Elements
    1
  • Package Body Material
    CERAMIC, METAL-SEALED COFIRED
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT
  • ECCN Code
    EAR99
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    HIGH RELIABILITY
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Reach Compliance Code
    unknown
  • Pin Count

    a count of all of the component leads (or pins)

    2
  • JESD-30 Code
    R-CDFM-F2
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    DEPLETION MODE
  • Case Connection
    SOURCE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • DS Breakdown Voltage-Min
    160 V
  • FET Technology
    HIGH ELECTRON MOBILITY
  • Highest Frequency Band
    S BAND
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