SGK5867-60A
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69096973-SGK5867-60A
Description: RF Power Field-Effect Transistor,
EGNB090M1A
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SUMITOMO ELECTRIC Industries LtdRF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, I2D, 2 PINEGNB090MK
SUMITOMO ELECTRIC Industries LtdRF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, MK, 2 PINSGN21C105MK
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SUMITOMO ELECTRIC Industries LtdRF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-4FHX35LG
SUMITOMO ELECTRIC Industries LtdRF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, SMT, 4 PIN