SGK5867-60A
-
69096973-SGK5867-60A
Description: RF Power Field-Effect Transistor,
SGFCF10S-DT1
SUMITOMO ELECTRIC Industries LtdRF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, PLASTIC, Z2D, 6 PINSGN21C105MK
SUMITOMO ELECTRIC Industries LtdRF Power Field-Effect Transistor,EGN21C160I2D
SUMITOMO ELECTRIC Industries LtdRF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, I2D, 2 PINEGNB090M1A
SUMITOMO ELECTRIC Device Innovations IncDescription: TransistorFLM4450-18F
SUMITOMO ELECTRIC Device Innovations IncDescription: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PINEGNB010MK
SUMITOMO ELECTRIC Industries LtdDescription: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL-CERAMIC PACKAGE-2EGN29B100IV-R
SUMITOMO ELECTRIC Device Innovations IncDescription: TransistorSGN19C210I2D
SUMITOMO ELECTRIC Industries LtdDescription: RF Power Field-Effect Transistor,EGN28B200IV-R
SUMITOMO ELECTRIC Device Innovations IncTransistorELM5964-4PST
SUMITOMO ELECTRIC Industries LtdRF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, PLASTIC, CASE I2C, 7 PIN