SUM80090E-GE3

Vishay Intertechnologies SUM80090E-GE3

Part No:

SUM80090E-GE3

Package:

-

AINNX NO:

68722439-SUM80090E-GE3

Description:

Description: Power Field-Effect Transistor, 128A I(D), 150V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3/2

Products specifications
  • Factory Lead Time
    16 Weeks, 3 Days
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    2
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    VISHAY INTERTECHNOLOGY INC
  • Package Description
    SMALL OUTLINE, R-PSSO-G2
  • Date Of Intro
    2016-05-01
  • Drain Current-Max (ID)
    128 A
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • Type of enclosure
    shielding
  • Dimension X
    54.6mm
  • Dimensions
    See
  • Version
    with fixing lugs
  • Enclosure series
    AW
  • Enclosures application
    designed for electronic circuits sensitive to electromagnetic interferences
  • Enclosure description
    EMI/RFI shielding,
  • Enclosure material
    aluminium
  • Dimension Z
    38.6mm
  • Dimension Y
    85mm
  • JESD-609 Code
    e3
  • ECCN Code
    EAR99
  • Terminal Finish
    MATTE TIN
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-263AB
  • Drain-source On Resistance-Max
    0.0105 Ω
  • Pulsed Drain Current-Max (IDM)
    240 A
  • DS Breakdown Voltage-Min
    150 V
  • Avalanche Energy Rating (Eas)
    180 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Saturation Current
    1
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