SQM100P10-19L_GE3

Vishay Intertechnologies SQM100P10-19L_GE3

Part No:

SQM100P10-19L_GE3

Package:

-

AINNX NO:

68722404-SQM100P10-19L_GE3

Description:

Description: Power Field-Effect Transistor, 93A I(D), 100V, 0.019ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN

Products specifications
  • Factory Lead Time
    18 Weeks
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Material
    aluminium
  • Number of Terminals
    2
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Type of mounting element
    holder
  • Mounting
    M4x10 screw
  • Mounting holes pitch
    55mm
  • Trade name
    handle
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    VISHAY INTERTECHNOLOGY INC
  • Package Description
    SMALL OUTLINE, R-PSSO-G2
  • Drain Current-Max (ID)
    93 A
  • Operating Temperature-Max
    150 °C
  • Operating Temperature-Min
    -55 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • JESD-609 Code
    e3
  • ECCN Code
    EAR99
  • Terminal Finish
    MATTE TIN
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Reference Standard
    AEC-Q101
  • JESD-30 Code
    R-PSSO-G2
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Polarity/Channel Type
    P-CHANNEL
  • JEDEC-95 Code
    TO-263AB
  • Drain-source On Resistance-Max
    0.019 Ω
  • Pulsed Drain Current-Max (IDM)
    200 A
  • DS Breakdown Voltage-Min
    100 V
  • Avalanche Energy Rating (Eas)
    245 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Saturation Current
    1
  • Height
    30mm
  • Length
    61.5mm
  • Width
    13mm
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