SI7686DP-T1-E3

Vishay Intertechnologies SI7686DP-T1-E3

Part No:

SI7686DP-T1-E3

Package:

-

AINNX NO:

68722477-SI7686DP-T1-E3

Description:

Power Field-Effect Transistor, 17.9A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    5
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Not Recommended
  • Ihs Manufacturer
    VISHAY INTERTECHNOLOGY INC
  • Package Description
    ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
  • Drain Current-Max (ID)
    17.9 A
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    UNSPECIFIED
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • JESD-609 Code
    e3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    C BEND
  • Reach Compliance Code
    compliant
  • JESD-30 Code
    R-XDSO-C5
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • Drain-source On Resistance-Max
    0.0095 Ω
  • Pulsed Drain Current-Max (IDM)
    50 A
  • DS Breakdown Voltage-Min
    30 V
  • Avalanche Energy Rating (Eas)
    5 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    38 W
  • Saturation Current
    1
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