SI4825DDY-T1-GE3

Vishay Intertechnologies SI4825DDY-T1-GE3

Part No:

SI4825DDY-T1-GE3

Package:

-

AINNX NO:

68716194-SI4825DDY-T1-GE3

Description:

Small Signal Field-Effect Transistor, 14.9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Material
    steel
  • Number of Terminals
    8
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Gross Weight
    55.00
  • Thread
    M6
  • Inner Diameter
    fastening hole (D2) - 10 mm
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    VISHAY INTERTECHNOLOGY INC
  • Package Description
    HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
  • Drain Current-Max (ID)
    14.9 A
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • JESD-609 Code
    e3
  • ECCN Code
    EAR99
  • Type
    Talrep hook-ring series DIN 1480
  • Terminal Finish
    MATTE TIN
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Depth
    hook grip (D1) - 10 mm
  • Reach Compliance Code
    compliant
  • JESD-30 Code
    R-PDSO-G8
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    P-CHANNEL
  • JEDEC-95 Code
    MS-012AA
  • Drain-source On Resistance-Max
    0.0125 Ω
  • DS Breakdown Voltage-Min
    30 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    5 W
  • Saturation Current
    1
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