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Home /Discrete Semiconductor Products /Transistors - FETs, MOSFETs - Arrays /SIA910EDJ-T1-GE3 /
SIA910EDJ-T1-GE3

VISHAY SIA910EDJ-T1-GE3

Part No:

SIA910EDJ-T1-GE3

Manufacturer:

VISHAY

Datasheet:

-

Package:

-

AINNX NO:

69124038-SIA910EDJ-T1-GE3

Description:

Transistor: N-MOSFET x2; TrenchFET®; unipolar; 12V; 4.5A; Idm: 20A

Products specifications
  • Type of transistor
    N-MOSFET x2
  • Polarisation
    unipolar
  • Drain-source voltage
    12V
  • Drain current
    4.5A
  • Pulsed drain current
    20A
  • Gate-source voltage
    ±8V
  • Mounting
    SMD
  • Kind of package
    reel,
  • Kind of channel
    enhanced
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Pricing & Ordering

  • Quantity

    Unit Price

    Ext. Price

  • 1+

    $57.505577

    $57.45

  • 10+

    $54.250541

    $542.55

  • 100+

    $51.179724

    $5,118.03

  • 500+

    $48.282776

    $24,141.35

  • 1000+

    $45.549796

    $45,549.76

* The above prices does not include taxes and freight rates, which will be calculated on the order pages.

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