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VISHAY SIA910EDJ-T1-GE3
Part No:
SIA910EDJ-T1-GE3
Manufacturer:
Datasheet:
Package:
-
AINNX NO:
69124038-SIA910EDJ-T1-GE3
Category:
Description:
Transistor: N-MOSFET x2;TrenchFET®;unipolar;12V;4.5A;Idm: 20A
Products specifications
- Type of transistorN-MOSFET x2
- Polarisationunipolar
- Drain-source voltage12V
- Drain current4.5A
- Pulsed drain current20A
- Gate-source voltage±8V
- MountingSMD
- Kind of packagereel,
- Kind of channelenhanced
- Gross weight0.1 g
- Power dissipation7.8W
- Gate charge16nC
- On-state resistance42mΩ
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Pricing & Ordering
Quantity
Unit Price
Ext. Price
1+
$57.368691
$57.38
10+
$54.121453
$541.18
100+
$51.057899
$5,105.76
500+
$48.167863
$24,083.91
1000+
$45.441333
$45,441.30
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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