SIA519EDJ-T1-GE3

VISHAY SIA519EDJ-T1-GE3

Part No:

SIA519EDJ-T1-GE3

Manufacturer:

VISHAY

Datasheet:

-

Package:

-

AINNX NO:

69123996-SIA519EDJ-T1-GE3

Description:

Transistor: N/P-MOSFET;TrenchFET®;unipolar;20/-20V;4.5/-4.5A

Products specifications
  • Type of transistor
    N/P-MOSFET
  • Polarisation
    unipolar
  • Drain-source voltage
    20/-20V
  • Drain current
    4.5/-4.5A
  • Gate-source voltage
    ±12V
  • Mounting
    SMD
  • Kind of package
    reel,
  • Kind of channel
    enhanced
  • Gross weight
    0.1 g
  • Power dissipation
    7.8W
  • Gate charge
    16/12nC
  • On-state resistance
    137/65mΩ
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