SI4621DY-T1-GE3

Vishay SI4621DY-T1-GE3

Part No:

SI4621DY-T1-GE3

Manufacturer:

Vishay

Datasheet:

-

Package:

-

AINNX NO:

31976354-SI4621DY-T1-GE3

Description:

Products specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Channel Mode
    Enhancement
  • Number of Elements per Chip
    1
  • Maximum Drain Source Voltage (V)
    20
  • Maximum Gate Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    3
  • Maximum Continuous Drain Current (A)
    5
  • Maximum Gate Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Typical Gate Charge @ Vgs (nC)
  • Typical Gate Charge @ 10V (nC)
    8.7
  • Typical Input Capacitance @ Vds (pF)
    450@10V
  • Maximum Power Dissipation (mW)
    2000
  • Typical Fall Time (ns)
    15
  • Typical Rise Time (ns)
    60
  • Typical Turn-Off Delay Time (ns)
    22
  • Typical Turn-On Delay Time (ns)
    15
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Mounting
    Surface Mount
  • Package Height
    1.55(Max)
  • Package Width
    4(Max)
  • Package Length
    5(Max)
  • PCB changed
    8
  • Standard Package Name
    SOP
  • Supplier Package
    SOIC N
  • Lead Shape
    Gull-wing
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Pin Count

    a count of all of the component leads (or pins)

    8
  • Configuration
    Single Dual Drain
  • Channel Type
    P
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