Vishay SI4599DY

EU RoHS

Not Compliant

ECCN (US)

EAR99

Automotive

No

PPAP

No

Category

Power MOSFET

Process Technology

TrenchFET

Channel Mode

Enhancement

Number of Elements per Chip

2

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

6.8@N Channel|5.8@P Channel

Typical Gate Charge @ Vgs (nC)

11.7@10V|[email protected]@N Channel|25@10V|[email protected]@P Channel

Typical Gate Charge @ 10V (nC)

11.7@N Channel|25@P Channel

Typical Input Capacitance @ Vds (pF)

640@20V@N Channel|970@20V@P Channel

Maximum Power Dissipation (mW)

2000

Typical Fall Time (ns)

9|10@N Channel|13@P Channel

Typical Rise Time (ns)

10|17@N Channel|12|33@P Channel

Typical Turn-Off Delay Time (ns)

15|16@N Channel|30|28@P Channel

Typical Turn-On Delay Time (ns)

7|16@N Channel|44@P Channel

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

Surface Mount

Package Height

1.55(Max)

Package Width

4(Max)

Package Length

5(Max)

PCB changed

8

Standard Package Name

SOP

Supplier Package

SOIC N

Lead Shape

Gull-wing

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Obsolete

Pin Count

a count of all of the component leads (or pins)

8

Configuration

Dual Dual Drain

Channel Type

N|P