RFM12U7X(TE12L,Q)

Toshiba Semiconductor and Storage RFM12U7X(TE12L,Q)

Part No:

RFM12U7X(TE12L,Q)

Datasheet:

-

Package:

TO-271AA

ROHS:

AINNX NO:

6093740-RFM12U7X(TE12L,Q)

Description:

RF MOSFET Transistors Radio-Freq PwrMOSFET N-Ch 4A 20W 20V

Products specifications
  • Package / Case
    TO-271AA
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Cut Tape (CT)
  • Published
    2009
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    20W
  • Reach Compliance Code
    unknown
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    4A
  • Frequency
    520MHz
  • Current - Test
    750mA
  • Drain to Source Voltage (Vdss)
    20V
  • Transistor Type
    N-Channel
  • Continuous Drain Current (ID)
    4A
  • Gate to Source Voltage (Vgs)
    10V
  • Gain
    10.8dB
  • Power - Output
    12W
  • Voltage - Test
    7.2V
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
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