RFM03U3CT(TE12L)

Toshiba Semiconductor and Storage RFM03U3CT(TE12L)

Part No:

RFM03U3CT(TE12L)

Datasheet:

-

Package:

2-SMD, No Lead Exposed Pad

ROHS:

AINNX NO:

6093709-RFM03U3CT(TE12L)

Description:

MOSFET N-CH RF-CST3

Products specifications
  • Package / Case
    2-SMD, No Lead Exposed Pad
  • Supplier Device Package
    RF-CST3
  • Voltage Rated

    RATED voltage is the voltage on the nameplate - the "design point" for maximum power throughput and safe thermal operation.

    16V
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Cut Tape (CT)
  • Published
    2009
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Current Rating (Amps)
    3A
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    7W
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    3A
  • Frequency
    520MHz
  • Current - Test
    500mA
  • Drain to Source Voltage (Vdss)
    16V
  • Transistor Type
    N-Channel
  • Continuous Drain Current (ID)
    2.5A
  • Gate to Source Voltage (Vgs)
    3V
  • Gain
    14.8dB
  • Power - Output
    3W
  • Voltage - Test
    3.6V
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
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