MRF6VP2600HR5

NXP Semiconductors MRF6VP2600HR5

Part No:

MRF6VP2600HR5

Manufacturer:

NXP Semiconductors

Package:

-

AINNX NO:

69822709-MRF6VP2600HR5

Description:

RF Power Transistor

Products specifications
  • Mount
    Screw
  • Weight
    13.155199 g
  • Number of Elements
    2
  • RoHS
    Compliant
  • Voltage, Rating
    110 V
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    225 °C
  • Min Operating Temperature
    -65 °C
  • Frequency
    225 MHz
  • Output Power

    That power available at a specified output of a device under specified conditions of operation.

    600 W
  • Test Current
    2.6 A
  • Drain to Source Voltage (Vdss)
    110 V
  • Continuous Drain Current (ID)
    50 µA
  • Gate to Source Voltage (Vgs)
    10 V
  • Max Frequency
    500 MHz
  • Max Output Power

    The maximum output power = the maximum output current × the rated output voltage

    125 W
  • Test Voltage
    50 V
  • Min Breakdown Voltage
    110 V
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
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