MRF8P20165WHSR3

NXP Semiconductors MRF8P20165WHSR3

Part No:

MRF8P20165WHSR3

Manufacturer:

NXP Semiconductors

Package:

-

AINNX NO:

69822442-MRF8P20165WHSR3

Description:

Single W-CDMA Lateral N-Channel RF Power MOSFET

Products specifications
  • Mount
    Surface Mount
  • Number of Pins
    5
  • Weight
    3.086101 g
  • Number of Elements
    2
  • RoHS
    Compliant
  • Voltage, Rating
    65 V
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    125 °C
  • Min Operating Temperature
    -65 °C
  • Frequency
    2.01 GHz
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Output Power

    That power available at a specified output of a device under specified conditions of operation.

    37 W
  • Halogen Free
    Halogen Free
  • Test Current
    550 mA
  • Drain to Source Voltage (Vdss)
    65 V
  • Gate to Source Voltage (Vgs)
    10 V
  • Gain
    14.8 dB
  • Max Frequency
    2.025 GHz
  • Drain to Source Breakdown Voltage
    65 V
  • Test Voltage
    28 V
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
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