PBR941,215

NXP Semiconductors PBR941,215

Part No:

PBR941,215

Manufacturer:

NXP Semiconductors

Package:

-

AINNX NO:

69818363-PBR941,215

Description:

PBR941 Series 8 GHz 10 V 360 mW UHF Wideband NPN Transistor - SOT23-3

Products specifications
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Mount
    Surface Mount
  • Number of Pins
    3
  • Weight
    4.535924 g
  • Case/Package
    TO-236-3
  • Collector-Emitter Breakdown Voltage
    10 V
  • Number of Elements
    1
  • RoHS
    Compliant
  • Schedule B
    8541210080
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    175 °C
  • Min Operating Temperature
    -65 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    360 mW
  • Frequency
    8 GHz
  • Polarity
    NPN
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    360 mW
  • Gain Bandwidth Product

    The gain–bandwidth product (designated as GBWP, GBW, GBP, or GB) for an amplifier is the product of the amplifier's bandwidth and the gain at which the bandwidth is measured.

    8 GHz
  • Collector Emitter Voltage (VCEO)
    10 V
  • Max Collector Current
    50 mA
  • Gain
    15 dB
  • Max Frequency
    8 GHz
  • Transition Frequency
    8 GHz
  • Max Breakdown Voltage
    10 V
  • Collector Base Voltage (VCBO)
    20 V
  • Emitter Base Voltage (VEBO)
    1.5 V
  • Height
    1 mm
  • Length
    3 mm
  • Width
    1.4 mm
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • Lead Free
    Lead Free
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