BAP55LX,315

NXP Semiconductors BAP55LX,315

Part No:

BAP55LX,315

Manufacturer:

NXP Semiconductors

Package:

-

AINNX NO:

69822673-BAP55LX,315

Description:

BAP55LX Series 50 V 100 mA 800 mOhm SMT Silicon PIN Diode - DFN1006D-2

Products specifications
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Mount
    Surface Mount
  • Number of Pins
    2
  • RoHS
    Compliant
  • Schedule B
    8541100060
  • Case/Package
    SOD
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape and Reel
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -65 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    135 mW
  • Max Current Rating
    100 mA
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Diode Type
    PIN - Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    135 mW
  • Forward Current

    Current which flows upon application of forward voltage.

    100 mA
  • Forward Voltage

    the amount of voltage needed to get current to flow across a diode.

    1.1 V
  • Reverse Voltage

    the voltage drop across the diode if the voltage at the cathode is more positive than the voltage at the anode

    50 V
  • Reverse Voltage (DC)
    50 V
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • Lead Free
    Lead Free
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