LPC1313FBD48/01,15

NXP Semiconductors LPC1313FBD48/01,15

Part No:

LPC1313FBD48/01,15

Manufacturer:

NXP Semiconductors

Package:

-

AINNX NO:

69823720-LPC1313FBD48/01,15

Description:

MCU 32-bit LPC1300 ARM Cortex M3 RISC 32KB Flash 3.3V 33-Pin HVQFN EP Tray

Products specifications
  • Mount
    Surface Mount
  • Number of Pins
    48
  • Watchdog Timers
    Yes
  • RoHS
    Compliant
  • Number of I/Os
    42
  • Memory Types
    FLASH
  • Case/Package
    LQFP
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    85 °C
  • Min Operating Temperature
    -40 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    1.5 W
  • Frequency
    72 MHz
  • Operating Supply Voltage

    The voltage level by which an electrical system is designated and to which certain operating characteristics of the system are related.

    3.3 V
  • Interface
    I2C, SPI, SSP, UART, USART
  • Max Supply Voltage

    In general, the absolute maximum common-mode voltage is VEE-0.3V and VCC+0.3V, but for products without a protection element at the VCC side, voltages up to the absolute maximum rated supply voltage (i.e. VEE+36V) can be supplied, regardless of supply voltage.

    3.6 V
  • Min Supply Voltage

    The minimum supply voltage (V min ) is explored for sequential logic circuits by statistically simulating the impact of within-die process variations and gate-dielectric soft breakdown on data retention and hold time.

    2 V
  • Memory Size

    The memory capacity is the amount of data a device can store at any given time in its memory.

    32 kB
  • RAM Size
    8 kB
  • Data Bus Width
    32 b
  • Number of Timers/Counters
    4
  • Core Architecture
    ARM
  • Max Frequency
    72 MHz
  • Number of Programmable I/O
    42
  • REACH SVHC
    No SVHC
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • Lead Free
    Lead Free
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