NTE Electronics, Inc NTE2393

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

NO

Supplier Device Package

TO-3P

Number of Terminals

3

Transistor Element Material

SILICON

Mfr

NTE Electronics, Inc

Package

Bag

Product Status

Active

Current - Continuous Drain (Id) @ 25℃

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

125W (Tc)

Manufacturer Part Number

NTE2393

Manufacturer

NTE Electronics

Package Description

FLANGE MOUNT, R-PSFM-T3

Package Style

FLANGE MOUNT

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

NOT SPECIFIED

Rohs Code

Yes

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

Active

Ihs Manufacturer

NTE ELECTRONICS INC

Risk Rank

2.13

Drain Current-Max (ID)

9 A

Series

-

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

150°C (TJ)

ECCN Code

EAR99

Subcategory

FET General Purpose Power

Terminal Position

SINGLE

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

THROUGH-HOLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

JESD-30 Code

R-PSFM-T3

Qualification Status

An indicator of formal certification of qualifications.

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

670mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Drain to Source Voltage (Vdss)

500 V

Vgs (Max)

±20V

Polarity/Channel Type

N-CHANNEL

Drain Current-Max (Abs) (ID)

9 A

Drain-source On Resistance-Max

0.7 Ω

Pulsed Drain Current-Max (IDM)

36 A

DS Breakdown Voltage-Min

500 V

FET Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)

150 W

FET Feature

-