NTE Electronics, Inc. NTE2392

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-204AA, TO-3

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

NO

Number of Pins

2

Supplier Device Package

TO-3

Weight

72.574779 g

Number of Terminals

2

Transistor Element Material

SILICON

RoHS

Non-Compliant

Turn Off Delay Time

It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

125 ns

Manufacturer Part Number

NTE2392

Manufacturer

NTE Electronics

Continuous Drain Current

40(A)

Drain-Source On-Volt

100(V)

Operating Temperature Classification

Military

Package Type

TO-3

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±20(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

No

Mounting

Through Hole

Package

Bag

Current - Continuous Drain (Id) @ 25℃

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Mfr

NTE Electronics, Inc

Power Dissipation (Max)

150W (Tc)

Product Status

Active

Package Description

FLANGE MOUNT, O-MBFM-P2

Package Style

FLANGE MOUNT

Package Body Material

METAL

Reflow Temperature-Max (s)

NOT SPECIFIED

Rohs Code

Yes

Turn-on Time-Max (ton)

135 ns

Package Shape

ROUND

Part Life Cycle Code

Active

Ihs Manufacturer

NTE ELECTRONICS INC

Turn-off Time-Max (toff)

225 ns

Risk Rank

1.6

Part Package Code

TO-204AA

Drain Current-Max (ID)

40 A

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 150°C (TJ)

Series

-

ECCN Code

EAR99

Type

Power MOSFET

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

150 °C

Min Operating Temperature

-55 °C

Subcategory

FET General Purpose Power

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

150 W

Technology

MOSFET (Metal Oxide)

Terminal Position

BOTTOM

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

PIN/PEG

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

Pin Count

a count of all of the component leads (or pins)

2 +Tab

JESD-30 Code

O-MBFM-P2

Qualification Status

An indicator of formal certification of qualifications.

Not Qualified

Polarity

N

Configuration

SINGLE WITH BUILT-IN DIODE

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

150 W

Case Connection

DRAIN

Turn On Delay Time

Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

35 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

55mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

3000 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs

120 nC @ 10 V

Drain to Source Voltage (Vdss)

100 V

Vgs (Max)

±20V

Polarity/Channel Type

N-CHANNEL

Continuous Drain Current (ID)

40 A

Threshold Voltage

4 V

JEDEC-95 Code

TO-3

Gate to Source Voltage (Vgs)

20 V

Drain Current-Max (Abs) (ID)

32 A

Drain-source On Resistance-Max

0.055 Ω

Drain to Source Breakdown Voltage

100 V

Pulsed Drain Current-Max (IDM)

160 A

DS Breakdown Voltage-Min

100 V

FET Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)

125 W

FET Feature

-

Drain to Source Resistance

55 mΩ

Nominal Vgs

4 V

Power Dissipation Ambient-Max

150 W

Width

22.1996 mm

Height

8.89 mm

Length

152.4 mm

REACH SVHC

Unknown