NTE67

NTE Electronics, Inc NTE67

Part No:

NTE67

Datasheet:

-

Package:

TO-220-3

AINNX NO:

28147245-NTE67

Description:

MOSFET N-CHANNEL 400V 4.5A TO220

Products specifications
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Supplier Device Package
    TO-220
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Mfr
    NTE Electronics, Inc
  • Package
    Bag
  • Product Status
    Active
  • Current - Continuous Drain (Id) @ 25℃
    4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Power Dissipation (Max)
    75W (Tc)
  • Manufacturer Part Number
    NTE67
  • Manufacturer
    NTE Electronics
  • Continuous Drain Current
    4.5(A)
  • Drain-Source On-Volt
    400(V)
  • Operating Temperature Classification
    Military
  • Package Type
    TO-220
  • Operating Temp Range
    -55C to 150C
  • Gate-Source Voltage (Max)
    ±20(V)
  • Channel Mode
    Enhancement
  • Number of Elements
    1
  • Rad Hardened
    No
  • Mounting
    Through Hole
  • Package Description
    FLANGE MOUNT, R-PSFM-T3
  • Package Style
    FLANGE MOUNT
  • Package Body Material
    PLASTIC/EPOXY
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Rohs Code
    Yes
  • Package Shape
    RECTANGULAR
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    NTE ELECTRONICS INC
  • Turn-off Time-Max (toff)
    90 ns
  • Risk Rank
    1.59
  • Part Package Code
    TO-220AB
  • Drain Current-Max (ID)
    4.5 A
  • Series
    -
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 150°C (TJ)
  • ECCN Code
    EAR99
  • Type
    Power MOSFET
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    HIGH RELIABILITY
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8541.29.00.95
  • Subcategory
    FET General Purpose Power
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    THROUGH-HOLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Pin Count

    a count of all of the component leads (or pins)

    3 +Tab
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Polarity
    N
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    75(W)
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.5Ohm @ 3A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    780 pF @ 25 V
  • Gate Charge (Qg) (Max) @ Vgs
    30 nC @ 10 V
  • Drain to Source Voltage (Vdss)
    400 V
  • Vgs (Max)
    ±20V
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-220AB
  • Drain Current-Max (Abs) (ID)
    5.5 A
  • Drain-source On Resistance-Max
    1.5 Ω
  • Pulsed Drain Current-Max (IDM)
    18 A
  • DS Breakdown Voltage-Min
    400 V
  • Avalanche Energy Rating (Eas)
    290 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    75 W
  • FET Feature
    -
  • Power Dissipation Ambient-Max
    75 W
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