Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.
NO
Supplier Device Package
TO-220
Number of Terminals
3
Transistor Element Material
SILICON
Mfr
NTE Electronics, Inc
Package
Bag
Product Status
Active
Current - Continuous Drain (Id) @ 25℃
6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
125W (Tc)
Manufacturer Part Number
NTE2379
Manufacturer
NTE Electronics
Continuous Drain Current
6.2(A)
Drain-Source On-Volt
600(V)
Operating Temperature Classification
Military
Package Type
TO-220
Operating Temp Range
-55C to 150C
Gate-Source Voltage (Max)
±20(V)
Channel Mode
Enhancement
Number of Elements
1
Rad Hardened
No
Mounting
Through Hole
Package Style
FLANGE MOUNT
Package Body Material
PLASTIC/EPOXY
Reflow Temperature-Max (s)
NOT SPECIFIED
Operating Temperature-Max
150 °C
Rohs Code
Yes
Package Shape
RECTANGULAR
Part Life Cycle Code
Active
Ihs Manufacturer
NTE ELECTRONICS INC
Risk Rank
2.3
Drain Current-Max (ID)
6.2 A
Series
-
Operating Temperature
The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.
-55°C ~ 150°C (TJ)
ECCN Code
EAR99
Type
Power MOSFET
Subcategory
FET General Purpose Powers
Terminal Position
SINGLE
Terminal Form
Occurring at or forming the end of a series, succession, or the like; closing; concluding.
THROUGH-HOLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Pin Count
a count of all of the component leads (or pins)
3 +Tab
JESD-30 Code
R-PSFM-T3
Qualification Status
An indicator of formal certification of qualifications.
Not Qualified
Polarity
N
Configuration
SINGLE WITH BUILT-IN DIODE
Operating Mode
A phase of operation during the operation and maintenance stages of the life cycle of a facility.
ENHANCEMENT MODE
Power Dissipation
the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.
125(W)
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.2Ohm @ 3.7A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Drain to Source Voltage (Vdss)
600 V
Vgs (Max)
±20V
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (Abs) (ID)
6.2 A
Drain-source On Resistance-Max
1.2 Ω
Pulsed Drain Current-Max (IDM)
25 A
DS Breakdown Voltage-Min
600 V
Avalanche Energy Rating (Eas)
570 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)
125 W
FET Feature
-