Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Short Body
Surface Mount
having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.
NO
Supplier Device Package
TO-92S
Number of Terminals
3
Transistor Element Material
SILICON
Mfr
NTE Electronics, Inc
Package
Bag
Product Status
Active
Current-Collector (Ic) (Max)
100 mA
Manufacturer Part Number
NTE2357
Manufacturer
NTE Electronics
Typical Resistor Ratio
1
Package Type
TO-92
Typical Input Resistor
22
Collector Current (DC)
0.2(A)
Emitter-Collector Voltage (Max)
50(V)
DC Current Gain
50
Package Description
CYLINDRICAL, O-PBCY-T3
Package Style
CYLINDRICAL
Package Body Material
PLASTIC/EPOXY
Reflow Temperature-Max (s)
NOT SPECIFIED
Rohs Code
Yes
Transition Frequency-Nom (fT)
250 MHz
Package Shape
ROUND
Number of Elements
1
Part Life Cycle Code
Active
Ihs Manufacturer
NTE ELECTRONICS INC
Risk Rank
2.16
Part Package Code
TO-92
Series
-
ECCN Code
EAR99
Type
NPN
Additional Feature
Any Feature, including a modified Existing Feature, that is not an Existing Feature.
BUILT IN BIAS RESISTOR RATIO 1
HTS Code
HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.
8541.21.00.75
Subcategory
BIP General Purpose Small Signal
Terminal Position
BOTTOM
Terminal Form
Occurring at or forming the end of a series, succession, or the like; closing; concluding.
THROUGH-HOLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Pin Count
a count of all of the component leads (or pins)
3
JESD-30 Code
O-PBCY-T3
Qualification Status
An indicator of formal certification of qualifications.
Not Qualified
Configuration
Single
Power Dissipation
the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.
0.3(W)
Power - Max
300 mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 5mA, 5V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Frequency - Transition
250 MHz
Power Dissipation-Max (Abs)
0.3 W
Collector Current-Max (IC)
0.1 A
DC Current Gain-Min (hFE)
50
Resistor - Base (R1)
22 kOhms
Resistor - Emitter Base (R2)
22 kOhms
Collector-Emitter Voltage-Max
50 V