Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Mount
Surface Mount
Surface Mount
having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.
YES
Number of Pins
3
Supplier Device Package
SOT-23
Weight
4.535924 g
Number of Terminals
3
Transistor Element Material
SILICON
Mfr
NTE Electronics, Inc
Package
Bag
Product Status
Active
Current-Collector (Ic) (Max)
100 mA
Manufacturer Part Number
NTE2419
Manufacturer
NTE Electronics
RoHS
Compliant
Package Description
SMALL OUTLINE, R-PDSO-G3
Package Style
SMALL OUTLINE
Package Body Material
PLASTIC/EPOXY
Transition Frequency-Nom (fT)
200 MHz
Package Shape
RECTANGULAR
Number of Elements
1
Part Life Cycle Code
Active
Ihs Manufacturer
NTE ELECTRONICS INC
Risk Rank
2.21
Series
-
ECCN Code
EAR99
Max Operating Temperature
The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.
150 °C
Min Operating Temperature
-55 °C
Additional Feature
Any Feature, including a modified Existing Feature, that is not an Existing Feature.
BUILT IN BIAS RESISTOR RATIO 1
HTS Code
HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.
8541.21.00.75
Subcategory
BIP General Purpose Small Signal
Terminal Position
DUAL
Terminal Form
Occurring at or forming the end of a series, succession, or the like; closing; concluding.
GULL WING
Reach Compliance Code
unknown
JESD-30 Code
R-PDSO-G3
Qualification Status
An indicator of formal certification of qualifications.
Not Qualified
Configuration
SINGLE WITH BUILT-IN RESISTOR
Element Configuration
The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.
Single
Power - Max
200 mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP - Pre-Biased
Max Collector Current
200 mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 10mA, 5V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Frequency - Transition
200 MHz
Power Dissipation-Max (Abs)
0.2 W
Collector Current-Max (IC)
0.1 A
DC Current Gain-Min (hFE)
50
Resistor - Base (R1)
47 kOhms
Resistor - Emitter Base (R2)
47 kOhms
Collector-Emitter Voltage-Max
50 V
Width
101.6 mm
Height
6.35 mm
Length
165.1 mm