Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Short Body
Surface Mount
having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.
NO
Supplier Device Package
TO-92S
Number of Terminals
3
Transistor Element Material
SILICON
Mfr
NTE Electronics, Inc
Package
Bag
Product Status
Active
Current-Collector (Ic) (Max)
100 mA
Manufacturer Part Number
NTE2360
Manufacturer
NTE Electronics
Package Description
CYLINDRICAL, O-PBCY-T3
Package Style
CYLINDRICAL
Package Body Material
PLASTIC/EPOXY
Reflow Temperature-Max (s)
NOT SPECIFIED
Rohs Code
Yes
Transition Frequency-Nom (fT)
200 MHz
Package Shape
ROUND
Number of Elements
1
Part Life Cycle Code
Active
Ihs Manufacturer
NTE ELECTRONICS INC
Risk Rank
2.16
Part Package Code
TO-92
Series
-
ECCN Code
EAR99
Additional Feature
Any Feature, including a modified Existing Feature, that is not an Existing Feature.
BUILT IN BIAS RESISTOR RATIO 1
HTS Code
HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.
8541.21.00.75
Subcategory
BIP General Purpose Small Signal
Terminal Position
BOTTOM
Terminal Form
Occurring at or forming the end of a series, succession, or the like; closing; concluding.
THROUGH-HOLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Pin Count
a count of all of the component leads (or pins)
3
JESD-30 Code
O-PBCY-T3
Qualification Status
An indicator of formal certification of qualifications.
Not Qualified
Configuration
SINGLE WITH BUILT-IN RESISTOR
Power - Max
300 mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 5mA, 5V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Frequency - Transition
200 MHz
Power Dissipation-Max (Abs)
0.3 W
Collector Current-Max (IC)
0.1 A
DC Current Gain-Min (hFE)
50
Resistor - Base (R1)
47 kOhms
Resistor - Emitter Base (R2)
47 kOhms
Collector-Emitter Voltage-Max
50 V