NTE Electronics, Inc NTE2367

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Short Body

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

NO

Supplier Device Package

TO-92S

Number of Terminals

3

Transistor Element Material

SILICON

Mfr

NTE Electronics, Inc

Package

Bag

Product Status

Active

Current-Collector (Ic) (Max)

100 mA

Manufacturer Part Number

NTE2367

Manufacturer

NTE Electronics

Package Description

CYLINDRICAL, O-PBCY-T3

Package Style

CYLINDRICAL

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

NOT SPECIFIED

Rohs Code

Yes

Transition Frequency-Nom (fT)

250 MHz

Package Shape

ROUND

Number of Elements

1

Part Life Cycle Code

Active

Ihs Manufacturer

NTE ELECTRONICS INC

Risk Rank

2.21

Part Package Code

TO-92

Series

-

ECCN Code

EAR99

Additional Feature

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

DIGITAL, BUILT IN BIAS RESISTOR

HTS Code

HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

8541.21.00.75

Subcategory

Other Transistors

Terminal Position

BOTTOM

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

THROUGH-HOLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

Pin Count

a count of all of the component leads (or pins)

3

JESD-30 Code

O-PBCY-T3

Qualification Status

An indicator of formal certification of qualifications.

Not Qualified

Configuration

SINGLE WITH BUILT-IN RESISTOR

Power - Max

300 mW

Transistor Application

SWITCHING

Polarity/Channel Type

NPN

Transistor Type

NPN - Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 10mA, 5V

Current - Collector Cutoff (Max)

500nA

Vce Saturation (Max) @ Ib, Ic

300mV @ 250μA, 5mA

Voltage - Collector Emitter Breakdown (Max)

50 V

Frequency - Transition

250 MHz

Power Dissipation-Max (Abs)

0.3 W

Collector Current-Max (IC)

0.1 A

DC Current Gain-Min (hFE)

30

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

4.7 kOhms

Collector-Emitter Voltage-Max

50 V