MGF1102

Mitsubishi Electric MGF1102

Part No:

MGF1102

Manufacturer:

Mitsubishi Electric

Datasheet:

Package:

-

AINNX NO:

69130829-MGF1102

Description:

RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, GD-2, 4 PIN

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    4
  • Transistor Element Material
    GALLIUM ARSENIDE
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    MITSUBISHI ELECTRIC CORP
  • Package Description
    DISK BUTTON, O-CRDB-F4
  • Drain Current-Max (ID)
    0.08 A
  • Number of Elements
    1
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    CERAMIC, METAL-SEALED COFIRED
  • Package Shape
    ROUND
  • Package Style
    DISK BUTTON
  • ECCN Code
    EAR99
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    LOW NOISE
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8541.21.00.75
  • Terminal Position
    RADIAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Reach Compliance Code
    unknown
  • Pin Count

    a count of all of the component leads (or pins)

    4
  • JESD-30 Code
    O-CRDB-F4
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    DUAL GATE, DEPLETION MODE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • FET Technology
    JUNCTION
  • Highest Frequency Band
    C BAND
  • Power Dissipation Ambient-Max
    0.3 W
  • Power Gain-Min (Gp)
    11 dB
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