RD02MUS1B

Mitsubishi Electric RD02MUS1B

Part No:

RD02MUS1B

Manufacturer:

Mitsubishi Electric

Package:

-

AINNX NO:

68723734-RD02MUS1B

Description:

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    MITSUBISHI ELECTRIC CORP
  • Package Description
    CHIP CARRIER, R-XQCC-N3
  • Drain Current-Max (ID)
    1.5 A
  • Package Body Material
    UNSPECIFIED
  • Package Shape
    RECTANGULAR
  • Package Style
    CHIP CARRIER
  • Type of connector
    pin strips
  • Connector
    socket
  • Kind of connector
    female
  • Spatial orientation
    straight
  • Contacts pitch
    2.54mm
  • Electrical mounting
    THT
  • Connector pinout layout
    2x45
  • Row pitch
    2.54mm
  • ECCN Code
    EAR99
  • Terminal Position
    QUAD
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    NO LEAD
  • Reach Compliance Code
    unknown
  • Pin Count

    a count of all of the component leads (or pins)

    10
  • JESD-30 Code
    R-XQCC-N3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • DS Breakdown Voltage-Min
    30 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY BAND
  • Profile
    beryllium copper
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