RD02LUS2-T513
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69075756-RD02LUS2-T513
RF Power Field-Effect Transistor,
MGFS45V2527A
Mitsubishi ElectricDescription: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-51, 3 PINRD02MUS1B
Mitsubishi ElectricRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10RD35HUF2
Mitsubishi ElectricRF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-8RD70HVF1C-501
Mitsubishi ElectricRF Power Field-Effect Transistor,RD04HMS2
Mitsubishi ElectricRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3MGFC36V5258
Mitsubishi ElectricDescription: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PINRD30HUF1
Mitsubishi ElectricRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FETRD01MUS1-101
Mitsubishi ElectricDescription: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-Oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-32SJ145
Mitsubishi ElectricSmall Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, SC-70, 3 PINFS1UM-18A
Mitsubishi ElectricDescription: Power Field-Effect Transistor, 1A I(D), 900V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET