RD07MUS2B-T512

Mitsubishi Electric RD07MUS2B-T512

Part No:

RD07MUS2B-T512

Manufacturer:

Mitsubishi Electric

Datasheet:

Package:

-

AINNX NO:

69164789-RD07MUS2B-T512

Description:

RF Power Field-Effect Transistor,

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    MITSUBISHI ELECTRIC CORP
  • Package Description
    ,
  • Date Of Intro
    2019-06-27
  • Drain Current-Max (ID)
    3 A
  • Number of Elements
    1
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    UNSPECIFIED
  • Package Shape
    RECTANGULAR
  • Package Style
    FLATPACK
  • ECCN Code
    EAR99
  • Terminal Position
    QUAD
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    NO LEAD
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-XQFP-N3
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • DS Breakdown Voltage-Min
    25 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY BAND
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