FM50E2Y-10

Mitsubishi Electric FM50E2Y-10

Part No:

FM50E2Y-10

Manufacturer:

Mitsubishi Electric

Datasheet:

Package:

-

AINNX NO:

69237591-FM50E2Y-10

Description:

Power Field-Effect Transistor, 50A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    5
  • Transistor Element Material
    SILICON
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    MITSUBISHI ELECTRIC CORP
  • Package Description
    FLANGE MOUNT, R-PUFM-X5
  • Drain Current-Max (ID)
    50 A
  • Number of Elements
    1
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT
  • ECCN Code
    EAR99
  • Terminal Position
    UPPER
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    UNSPECIFIED
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-PUFM-X5
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE AND RESISTOR
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    ISOLATED
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • Drain-source On Resistance-Max
    0.14 Ω
  • DS Breakdown Voltage-Min
    500 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
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