NAND01GW3B2AZA6E

Micron Technology NAND01GW3B2AZA6E

Part No:

NAND01GW3B2AZA6E

Manufacturer:

Micron Technology

Datasheet:

-

Package:

-

AINNX NO:

31955465-NAND01GW3B2AZA6E

Description:

Products specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    3A991.b.1.a
  • Automotive
    No
  • PPAP
    No
  • Cell Type
    NAND
  • Chip Density (bit)
    1G
  • Block Organization
    Symmetrical
  • Address Bus Width (bit)
    28
  • Number of Bits/Word (bit)
    8
  • Number of Words
    128M
  • Programmability
    Yes
  • Timing Type
    Asynchronous
  • Max. Access Time (ns)
    25000
  • Maximum Erase Time (S)
    0.003/Block
  • Maximum Page Access Time (ns)
    50(Min)
  • Maximum Programming Time (ms)
    0.7/Page
  • Interface Type
    Parallel
  • Minimum Operating Supply Voltage (V)
    2.7
  • Typical Operating Supply Voltage (V)
    3.3|3
  • Maximum Operating Supply Voltage (V)
    3.6
  • Operating Current (mA)
    30
  • Program Current (mA)
    30
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    85
  • Supplier Temperature Grade
    Industrial
  • Command Compatible
    No
  • ECC Support
    Yes
  • Support of Page Mode
    Yes
  • Minimum Endurance (Cycles)
    100000
  • Mounting
    Surface Mount
  • Package Height
    0.7(Max)
  • Package Width
    9.5
  • Package Length
    12
  • PCB changed
    63
  • Standard Package Name
    BGA
  • Supplier Package
    VFBGA
  • Lead Shape
    Ball
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tray
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Pin Count

    a count of all of the component leads (or pins)

    63
  • Architecture
    Sectored
  • Sector Size
    128Kbyte x 1024
  • Page Size
    2Kbyte
  • Boot Block
    No
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