VRF2933

Microchip Technology VRF2933

Part No:

VRF2933

Datasheet:

-

Package:

M177

AINNX NO:

31026312-VRF2933

Description:

RF MOSFET Transistors FG, MOSFET, ARF, RoHS, M177View in Development Tools Selector

Products specifications
  • Package / Case
    M177
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Supplier Device Package
    M177
  • Number of Terminals
    4
  • Transistor Element Material
    SILICON
  • RoHS
    Details
  • Transistor Polarity
    N-Channel
  • Id - Continuous Drain Current
    42 A
  • Vds - Drain-Source Breakdown Voltage
    180 V
  • Minimum Operating Temperature
    - 65 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • Forward Transconductance - Min
    8 mS
  • Pd - Power Dissipation
    648 W
  • Factory Pack QuantityFactory Pack Quantity
    1
  • Vgs - Gate-Source Voltage
    40 V
  • Vgs th - Gate-Source Threshold Voltage
    3.6 V
  • Unit Weight
    1.101341 oz
  • Continuous Drain Current Id
    42
  • Package
    Bulk
  • Base Product Number
    VRF2933
  • Mfr
    Microchip Technology
  • Product Status
    Active
  • Voltage Rated

    RATED voltage is the voltage on the nameplate - the "design point" for maximum power throughput and safe thermal operation.

    170 V
  • Mounting Styles
    Flange Mount
  • Rds On - Drain-Source Resistance
    -
  • Package Description
    0.630 INCH, ROHS COMPLIANT, M177, SOE, 4 PIN
  • Package Style
    FLANGE MOUNT
  • Package Body Material
    CERAMIC, METAL-SEALED COFIRED
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Operating Temperature-Max
    200 °C
  • Rohs Code
    Yes
  • Manufacturer Part Number
    VRF2933
  • Package Shape
    ROUND
  • Number of Elements
    1
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    MICROSEMI CORP
  • Risk Rank
    2.19
  • Drain Current-Max (ID)
    40 A
  • Series
    -
  • ECCN Code
    EAR99
  • Type
    RF Power MOSFET
  • Current Rating (Amps)
    2mA
  • Terminal Position
    RADIAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Frequency
    150MHz
  • JESD-30 Code
    O-CRFM-F4
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    30 MHz
  • Configuration
    N-Channel
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    648
  • Case Connection
    SOURCE
  • Output Power

    That power available at a specified output of a device under specified conditions of operation.

    300 W
  • Current - Test
    250 mA
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • Operating Temperature Range

    An operating temperature is the allowable temperature range of the local ambient environment at which an electrical or mechanical device operates. The device will operate effectively within a specified temperature range which varies based on the device function and application context, and ranges from the minimum operating temperature to the maximum operating temperature (or peak operating temperature).

    - 65 C to + 150 C
  • Gain
    25 dB
  • DS Breakdown Voltage-Min
    170 V
  • Channel Type
    N
  • Power - Output
    300W
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Noise Figure

    Noise figure (NF) and noise factor (F) are measures of degradation of the signal-to-noise ratio (SNR), caused by components in a signal chain.

    -
  • Voltage - Test
    50 V
  • Highest Frequency Band
    VERY HIGH FREQUENCY BAND
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