ARF476FL

Microchip Technology ARF476FL

Part No:

ARF476FL

Datasheet:

-

Package:

-

AINNX NO:

31026272-ARF476FL

Description:

RF MOSFET Transistors FG, MOSFET, 500V, T3CView in Development Tools Selector

Products specifications
  • Lifecycle Status
    Production (Last Updated: 2 months ago)
  • Package / Case
    -
  • Mount
    Screw
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Pins
    8
  • Supplier Device Package
    -
  • Number of Terminals
    8
  • Transistor Element Material
    SILICON
  • RoHS
    Details
  • Transistor Polarity
    N-Channel
  • Id - Continuous Drain Current
    10 A
  • Vds - Drain-Source Breakdown Voltage
    500 V
  • Minimum Operating Temperature
    - 55 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 175 C
  • Forward Transconductance - Min
    3 mS
  • Pd - Power Dissipation
    910 W
  • Factory Pack QuantityFactory Pack Quantity
    1
  • Vgs - Gate-Source Voltage
    30 V
  • Vgs th - Gate-Source Threshold Voltage
    3.3 V
  • Unit Weight
    0.462535 oz
  • Continuous Drain Current Id
    10
  • Package
    Tray
  • Base Product Number
    ARF476
  • Mfr
    Microchip Technology
  • Product Status
    Active
  • Voltage Rated

    RATED voltage is the voltage on the nameplate - the "design point" for maximum power throughput and safe thermal operation.

    500 V
  • Voltage, Rating
    500 V
  • Number of Elements
    2
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    12 ns
  • Mounting Styles
    Flange Mount
  • Rds On - Drain-Source Resistance
    -
  • Package Style
    FLANGE MOUNT
  • Package Body Material
    UNSPECIFIED
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Operating Temperature-Max
    175 °C
  • Rohs Code
    Yes
  • Manufacturer Part Number
    ARF476FL
  • Package Shape
    RECTANGULAR
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    MICROSEMI CORP
  • Risk Rank
    2.27
  • Drain Current-Max (ID)
    10 A
  • Series
    -
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Pbfree Code
    No
  • ECCN Code
    EAR99
  • Type
    RF Power MOSFET
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    175 °C
  • Min Operating Temperature
    -55 °C
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    HIGH VOLTAGE
  • Current Rating (Amps)
    10A
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    910 W
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    10 A
  • Frequency
    128MHz
  • JESD-30 Code
    R-XDFM-F8
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    150 MHz
  • Configuration
    2 N-Channel (Dual) Common Source
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    910
  • Output Power

    That power available at a specified output of a device under specified conditions of operation.

    900 W
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    5.1 ns
  • Current - Test
    15 mA
  • Transistor Application
    AMPLIFIER
  • Test Current
    15 mA
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    4.1 ns
  • Drain to Source Voltage (Vdss)
    500 V
  • Polarity/Channel Type
    N-CHANNEL
  • Operating Temperature Range

    An operating temperature is the allowable temperature range of the local ambient environment at which an electrical or mechanical device operates. The device will operate effectively within a specified temperature range which varies based on the device function and application context, and ranges from the minimum operating temperature to the maximum operating temperature (or peak operating temperature).

    - 55 C to + 175 C
  • Continuous Drain Current (ID)
    10 A
  • Gate to Source Voltage (Vgs)
    30 V
  • Gain
    15 dB
  • Max Frequency
    150 MHz
  • DS Breakdown Voltage-Min
    500 V
  • Channel Type
    N
  • Power - Output
    900W
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Noise Figure

    Noise figure (NF) and noise factor (F) are measures of degradation of the signal-to-noise ratio (SNR), caused by components in a signal chain.

    -
  • Voltage - Test
    150 V
  • Highest Frequency Band
    VERY HIGH FREQUENCY BAND
  • Test Voltage
    150 V
  • Lead Free
    Lead Free
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