ARF1510

Microchip Technology ARF1510

Part No:

ARF1510

Datasheet:

-

Package:

T-1

AINNX NO:

31026398-ARF1510

Description:

RF MOSFET Transistors FG, MOSFET, 1000V, ARF, T1AView in Development Tools Selector

Products specifications
  • Lifecycle Status
    Production (Last Updated: 2 months ago)
  • Package / Case
    T-1
  • Mount
    Surface Mount
  • Number of Pins
    10
  • Supplier Device Package
    T-1
  • RoHS
    Details
  • Transistor Polarity
    N-Channel
  • Id - Continuous Drain Current
    8 A
  • Vds - Drain-Source Breakdown Voltage
    1 kV
  • Minimum Operating Temperature
    - 55 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 175 C
  • Forward Transconductance - Min
    3 mS
  • Pd - Power Dissipation
    1.5 kW
  • Factory Pack QuantityFactory Pack Quantity
    1
  • Vgs - Gate-Source Voltage
    30 V
  • Vgs th - Gate-Source Threshold Voltage
    5 V
  • Unit Weight
    0.687987 oz
  • Continuous Drain Current Id
    8
  • Package
    Tube
  • Base Product Number
    ARF1510
  • Mfr
    Microchip Technology
  • Product Status
    Active
  • Voltage Rated

    RATED voltage is the voltage on the nameplate - the "design point" for maximum power throughput and safe thermal operation.

    1000 V
  • Voltage, Rating
    1 kV
  • Number of Elements
    4
  • Mounting Styles
    Flange Mount
  • Rds On - Drain-Source Resistance
    -
  • Series
    -
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Type
    RF Power MOSFET
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    175 °C
  • Min Operating Temperature
    -55 °C
  • Current Rating (Amps)
    8A
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    1.5 kW
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    8 A
  • Frequency
    40.7MHz
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    40 MHz
  • Configuration
    N-Channel
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    1.5
  • Output Power

    That power available at a specified output of a device under specified conditions of operation.

    750 W
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    5 ns
  • Drain to Source Voltage (Vdss)
    1 kV
  • Operating Temperature Range

    An operating temperature is the allowable temperature range of the local ambient environment at which an electrical or mechanical device operates. The device will operate effectively within a specified temperature range which varies based on the device function and application context, and ranges from the minimum operating temperature to the maximum operating temperature (or peak operating temperature).

    - 55 C to + 175 C
  • Continuous Drain Current (ID)
    8 A
  • Gate to Source Voltage (Vgs)
    30 V
  • Gain
    17 dB
  • Channel Type
    N
  • Power - Output
    750W
  • Noise Figure

    Noise figure (NF) and noise factor (F) are measures of degradation of the signal-to-noise ratio (SNR), caused by components in a signal chain.

    -
  • Voltage - Test
    400 V
  • Test Voltage
    400 V
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
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