ARF1500

Microchip Technology ARF1500

Part No:

ARF1500

Datasheet:

-

Package:

T-1

AINNX NO:

31026285-ARF1500

Description:

RF MOSFET Transistors FG, MOSFET, 1000V, ARF, T1View in Development Tools Selector

Products specifications
  • Lifecycle Status
    Production (Last Updated: 2 months ago)
  • Package / Case
    T-1
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Supplier Device Package
    T-1
  • Number of Terminals
    6
  • Transistor Element Material
    SILICON
  • RoHS
    Details
  • Transistor Polarity
    N-Channel
  • Id - Continuous Drain Current
    60 A
  • Vds - Drain-Source Breakdown Voltage
    500 V
  • Minimum Operating Temperature
    - 55 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 175 C
  • Channel Mode
    Enhancement
  • Forward Transconductance - Min
    6 mS
  • Pd - Power Dissipation
    1.5 kW
  • Factory Pack QuantityFactory Pack Quantity
    1
  • Vgs - Gate-Source Voltage
    30 V
  • Vgs th - Gate-Source Threshold Voltage
    5 V
  • Unit Weight
    0.706030 oz
  • Package
    Box
  • Base Product Number
    ARF1500
  • Mfr
    Microchip Technology
  • Product Status
    Active
  • Voltage Rated

    RATED voltage is the voltage on the nameplate - the "design point" for maximum power throughput and safe thermal operation.

    500 V
  • Voltage, Rating
    500 V
  • Number of Elements
    1
  • Package Description
    CERAMIC PACKAGE-6
  • Package Style
    FLATPACK
  • Moisture Sensitivity Levels
    1
  • Package Body Material
    CERAMIC, METAL-SEALED COFIRED
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Operating Temperature-Max
    175 °C
  • Rohs Code
    Yes
  • Manufacturer Part Number
    ARF1500
  • Package Shape
    SQUARE
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    MICROSEMI CORP
  • Risk Rank
    1.63
  • Drain Current-Max (ID)
    60 A
  • Mounting Styles
    Flange Mount
  • Rds On - Drain-Source Resistance
    -
  • Series
    -
  • JESD-609 Code
    e1
  • Pbfree Code
    Yes
  • Type
    RF Power MOSFET
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    175 °C
  • Min Operating Temperature
    -55 °C
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    HIGH RELIABILITY
  • Current Rating (Amps)
    60A
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    1.5 kW
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    60 A
  • Frequency
    27.12MHz
  • Pin Count

    a count of all of the component leads (or pins)

    6
  • JESD-30 Code
    S-CDFP-F6
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    40 MHz
  • Configuration
    N-Channel
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    ISOLATED
  • Output Power

    That power available at a specified output of a device under specified conditions of operation.

    750 W
  • Transistor Application
    AMPLIFIER
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    6 ns
  • Drain to Source Voltage (Vdss)
    500 V
  • Polarity/Channel Type
    N-CHANNEL
  • Operating Temperature Range

    An operating temperature is the allowable temperature range of the local ambient environment at which an electrical or mechanical device operates. The device will operate effectively within a specified temperature range which varies based on the device function and application context, and ranges from the minimum operating temperature to the maximum operating temperature (or peak operating temperature).

    - 55 C to + 175 C
  • Continuous Drain Current (ID)
    60 A
  • Gate to Source Voltage (Vgs)
    30 V
  • Gain
    17 dB
  • Drain Current-Max (Abs) (ID)
    60 A
  • DS Breakdown Voltage-Min
    500 V
  • Power - Output
    750W
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    1500 W
  • Noise Figure

    Noise figure (NF) and noise factor (F) are measures of degradation of the signal-to-noise ratio (SNR), caused by components in a signal chain.

    -
  • Voltage - Test
    125 V
  • Highest Frequency Band
    VERY HIGH FREQUENCY BAND
  • Test Voltage
    125 V
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
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