ARF463AG

Microchip Technology ARF463AG

Part No:

ARF463AG

Datasheet:

-

Package:

TO-247-3

AINNX NO:

31026319-ARF463AG

Description:

RF MOSFET Transistors FG, MOSFET, 500V, TO-247, RoHSView in Development Tools Selector

Products specifications
  • Package / Case
    TO-247-3
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Supplier Device Package
    TO-247
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • RoHS
    Details
  • Transistor Polarity
    N-Channel
  • Id - Continuous Drain Current
    9 A
  • Vds - Drain-Source Breakdown Voltage
    500 V
  • Minimum Operating Temperature
    - 55 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • Mounting Styles
    Through Hole
  • Channel Mode
    Enhancement
  • Forward Transconductance - Min
    4 mS
  • Pd - Power Dissipation
    180 W
  • Factory Pack QuantityFactory Pack Quantity
    1
  • Vgs - Gate-Source Voltage
    30 V
  • Vgs th - Gate-Source Threshold Voltage
    5 V
  • Unit Weight
    1.340411 oz
  • Continuous Drain Current Id
    9
  • Package
    Tube
  • Base Product Number
    ARF463
  • Mfr
    Microchip Technology
  • Product Status
    Active
  • Voltage Rated

    RATED voltage is the voltage on the nameplate - the "design point" for maximum power throughput and safe thermal operation.

    500 V
  • Rds On - Drain-Source Resistance
    -
  • Package Style
    FLANGE MOUNT
  • Package Body Material
    PLASTIC/EPOXY
  • Operating Temperature-Min
    -55 °C
  • Operating Temperature-Max
    150 °C
  • Rohs Code
    Yes
  • Manufacturer Part Number
    ARF463AG
  • Turn-on Time-Max (ton)
    18 ns
  • Package Shape
    RECTANGULAR
  • Number of Elements
    1
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    MICROSEMI CORP
  • Turn-off Time-Max (toff)
    28 ns
  • Risk Rank
    1.29
  • Drain Current-Max (ID)
    9 A
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Series
    -
  • Pbfree Code
    No
  • ECCN Code
    EAR99
  • Type
    RF Power MOSFET
  • Current Rating (Amps)
    9A
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    THROUGH-HOLE
  • Reach Compliance Code
    compliant
  • Frequency
    81.36MHz
  • JESD-30 Code
    R-PSFM-T3
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    100 MHz
  • Configuration
    N-Channel
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    180
  • Case Connection
    SOURCE
  • Output Power

    That power available at a specified output of a device under specified conditions of operation.

    100 W
  • Current - Test
    50 mA
  • Transistor Application
    AMPLIFIER
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    4.1 ns
  • Polarity/Channel Type
    N-CHANNEL
  • Operating Temperature Range

    An operating temperature is the allowable temperature range of the local ambient environment at which an electrical or mechanical device operates. The device will operate effectively within a specified temperature range which varies based on the device function and application context, and ranges from the minimum operating temperature to the maximum operating temperature (or peak operating temperature).

    - 55 C to + 150 C
  • JEDEC-95 Code
    TO-247
  • Gain
    15 dB
  • Drain Current-Max (Abs) (ID)
    9 A
  • DS Breakdown Voltage-Min
    500 V
  • Channel Type
    N
  • Power - Output
    100W
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Noise Figure

    Noise figure (NF) and noise factor (F) are measures of degradation of the signal-to-noise ratio (SNR), caused by components in a signal chain.

    -
  • Voltage - Test
    125 V
  • Feedback Cap-Max (Crss)
    12 pF
  • Highest Frequency Band
    VERY HIGH FREQUENCY BAND
  • Power Gain-Min (Gp)
    13 dB
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