Microchip Technology APTGT50SK170TG

Lifecycle Status

Production (Last Updated: 2 months ago)

Package / Case

SP4

Mounting Type

Chassis Mount

Mount

Chassis Mount, Screw

Number of Pins

20

Supplier Device Package

SP4

RoHS

Details

Collector- Emitter Voltage VCEO Max

1.7 kV

Pd - Power Dissipation

312 W

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 100 C

Maximum Gate Emitter Voltage

20 V

Mounting Styles

Chassis Mount

Factory Pack QuantityFactory Pack Quantity

1

Unit Weight

3.880136 oz

Package

Bulk

Current-Collector (Ic) (Max)

75 A

Base Product Number

APTGT50

Mfr

Microchip Technology

Product Status

Active

Collector-Emitter Breakdown Voltage

1.7 kV

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tube

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-40°C ~ 150°C (TJ)

Series

-

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

150 °C

Min Operating Temperature

-40 °C

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

312 W

Configuration

Single

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Power - Max

312 W

Input

Standard

Collector Emitter Voltage (VCEO)

1.7 kV

Max Collector Current

75 A

Current - Collector Cutoff (Max)

250 µA

Voltage - Collector Emitter Breakdown (Max)

1700 V

Input Capacitance

The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

4.4 nF

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 50A

Continuous Collector Current

75

IGBT Type

Trench Field Stop

NTC Thermistor

resistors with a negative temperature coefficient, which means that the resistance decreases with increasing temperature.

Yes

Input Capacitance (Cies) @ Vce

4.4 nF @ 25 V

Product

IGBT Silicon Modules

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No