APT46GA90JD40

Microchip Technology APT46GA90JD40

Part No:

APT46GA90JD40

Datasheet:

-

Package:

SOT-227-4

AINNX NO:

31026215-APT46GA90JD40

Description:

IGBT Modules FG, IGBT-COMBI, 900V, SOT-227View in Development Tools Selector

Products specifications
  • Lifecycle Status
    Production (Last Updated: 2 months ago)
  • Package / Case
    SOT-227-4
  • Mounting Type
    Chassis Mount
  • Mount
    Chassis Mount, Screw
  • Number of Pins
    4
  • Supplier Device Package
    ISOTOP®
  • Weight
    30.000004 g
  • RoHS
    Details
  • Collector- Emitter Voltage VCEO Max
    900 V
  • Pd - Power Dissipation
    284 W
  • Minimum Operating Temperature
    - 55 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • Maximum Gate Emitter Voltage
    30 V
  • Mounting Styles
    Chassis Mount
  • Factory Pack QuantityFactory Pack Quantity
    1
  • Tradename
    POWER MOS 8, ISOTOP
  • Unit Weight
    1.058219 oz
  • Package
    Tube
  • Current-Collector (Ic) (Max)
    87 A
  • Base Product Number
    APT46GA90
  • Mfr
    Microchip Technology
  • Product Status
    Active
  • Collector-Emitter Breakdown Voltage
    900 V
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 150°C (TJ)
  • Series
    POWER MOS 8™
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -55 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    284 W
  • Configuration
    Single
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    284
  • Power - Max
    284 W
  • Input
    Standard
  • Collector Emitter Voltage (VCEO)
    900 V
  • Max Collector Current
    87 A
  • Operating Temperature Range

    An operating temperature is the allowable temperature range of the local ambient environment at which an electrical or mechanical device operates. The device will operate effectively within a specified temperature range which varies based on the device function and application context, and ranges from the minimum operating temperature to the maximum operating temperature (or peak operating temperature).

    - 55 C to + 150 C
  • Current - Collector Cutoff (Max)
    350 µA
  • Voltage - Collector Emitter Breakdown (Max)
    900 V
  • Input Capacitance

    The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

    4.17 nF
  • Vce(on) (Max) @ Vge, Ic
    3.1V @ 15V, 47A
  • Continuous Collector Current
    87
  • IGBT Type
    PT
  • NTC Thermistor

    resistors with a negative temperature coefficient, which means that the resistance decreases with increasing temperature.

    No
  • Input Capacitance (Cies) @ Vce
    4.17 nF @ 25 V
  • Product
    IGBT Silicon Modules
  • Height
    9.6 mm
  • Length
    38.2 mm
  • Width
    25.4 mm
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
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