APTGL475U120DAG

Microchip Technology APTGL475U120DAG

Part No:

APTGL475U120DAG

Datasheet:

-

Package:

SP6

AINNX NO:

31026165-APTGL475U120DAG

Description:

IGBT Modules CC6171View in Development Tools Selector

Products specifications
  • Package / Case
    SP6
  • Mounting Type
    Chassis Mount
  • Supplier Device Package
    SP6
  • RoHS
    Details
  • Collector- Emitter Voltage VCEO Max
    1.2 kV
  • Pd - Power Dissipation
    2.307 kW
  • Minimum Operating Temperature
    - 40 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 100 C
  • Maximum Gate Emitter Voltage
    20 V
  • Mounting Styles
    Chassis Mount
  • Factory Pack QuantityFactory Pack Quantity
    1
  • Unit Weight
    3.880136 oz
  • Package
    Bulk
  • Current-Collector (Ic) (Max)
    610 A
  • Base Product Number
    APTGL475
  • Mfr
    Microchip Technology
  • Product Status
    Active
  • Operating Temperature-Max
    175 °C
  • Rohs Code
    Yes
  • Manufacturer Part Number
    APTGL475U120DAG
  • Number of Elements
    1
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    MICROSEMI CORP
  • Risk Rank
    5.69
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -40°C ~ 175°C (TJ)
  • Series
    -
  • ECCN Code
    EAR99
  • Reach Compliance Code
    compliant
  • Configuration
    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    2.307
  • Power - Max
    2307 W
  • Input
    Standard
  • Current - Collector Cutoff (Max)
    4 mA
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Power Dissipation-Max (Abs)
    2307 W
  • Vce(on) (Max) @ Vge, Ic
    2.2V @ 15V, 400A
  • Collector Current-Max (IC)
    610 A
  • Continuous Collector Current
    610
  • IGBT Type
    Trench Field Stop
  • Collector-Emitter Voltage-Max
    1200 V
  • NTC Thermistor

    resistors with a negative temperature coefficient, which means that the resistance decreases with increasing temperature.

    No
  • Gate-Emitter Voltage-Max
    20 V
  • Input Capacitance (Cies) @ Vce
    24.6 nF @ 25 V
  • VCEsat-Max
    2.2 V
  • Product
    IGBT Silicon Modules
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