Microchip Technology APTGT50DDA120T3G

Lifecycle Status

Production (Last Updated: 2 months ago)

Package / Case

SP3F-32

Mounting Type

Chassis Mount

Mount

Chassis Mount, Screw

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

NO

Number of Pins

32

Supplier Device Package

SP3

Number of Terminals

25

Transistor Element Material

SILICON

RoHS

Details

Collector- Emitter Voltage VCEO Max

1200 V

Pd - Power Dissipation

270 W

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 125 C

Maximum Gate Emitter Voltage

20 V

Mounting Styles

Chassis Mount

Factory Pack QuantityFactory Pack Quantity

1

Unit Weight

3.880136 oz

Package

Bulk

Current-Collector (Ic) (Max)

75 A

Base Product Number

APTGT50

Mfr

Microchip Technology

Product Status

Active

Schedule B

8541290080

Collector-Emitter Breakdown Voltage

1.2 kV

Turn Off Delay Time

It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

420 ns

Package Description

FLANGE MOUNT, R-XUFM-X25

Package Style

FLANGE MOUNT

Moisture Sensitivity Levels

1

Package Body Material

UNSPECIFIED

Turn-on Time-Nom (ton)

140 ns

Turn-off Time-Nom (toff)

610 ns

Reflow Temperature-Max (s)

NOT SPECIFIED

Operating Temperature-Max

150 °C

Rohs Code

Yes

Manufacturer Part Number

APTGT50DDA120T3G

Package Shape

RECTANGULAR

Number of Elements

2

Part Life Cycle Code

Active

Ihs Manufacturer

MICROSEMI CORP

Risk Rank

5.17

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tube

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-40°C ~ 175°C (TJ)

Series

-

JESD-609 Code

e1

Pbfree Code

Yes

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

150 °C

Min Operating Temperature

-40 °C

Additional Feature

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

AVALANCHE RATED

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

270 W

Terminal Position

UPPER

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

UNSPECIFIED

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

compliant

Pin Count

a count of all of the component leads (or pins)

25

JESD-30 Code

R-XUFM-X25

Qualification Status

An indicator of formal certification of qualifications.

Not Qualified

Configuration

Dual

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Dual

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

270 W

Case Connection

ISOLATED

Turn On Delay Time

Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

90 ns

Power - Max

270 W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.2 kV

Max Collector Current

75 A

Current - Collector Cutoff (Max)

250 µA

Voltage - Collector Emitter Breakdown (Max)

1200 V

Input Capacitance

The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

3.6 nF

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Collector Current-Max (IC)

75 A

Max Junction Temperature (Tj)

175 °C

Continuous Collector Current

75

IGBT Type

Trench Field Stop

Collector-Emitter Voltage-Max

1200 V

NTC Thermistor

resistors with a negative temperature coefficient, which means that the resistance decreases with increasing temperature.

Yes

Input Capacitance (Cies) @ Vce

3.6 nF @ 25 V

Product

IGBT Silicon Modules

Height

12.1 mm

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No