APTGL60DDA120T3G

Microchip Technology APTGL60DDA120T3G

Part No:

APTGL60DDA120T3G

Datasheet:

-

Package:

SP3-32

AINNX NO:

31026225-APTGL60DDA120T3G

Description:

IGBT Modules CC3097View in Development Tools Selector

Products specifications
  • Lifecycle Status
    Production (Last Updated: 1 month ago)
  • Package / Case
    SP3-32
  • Mounting Type
    Chassis Mount
  • Mount
    Chassis Mount, Screw
  • Number of Pins
    16
  • Supplier Device Package
    SP3
  • RoHS
    Details
  • Collector- Emitter Voltage VCEO Max
    1.2 kV
  • Pd - Power Dissipation
    280 W
  • Minimum Operating Temperature
    - 40 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 100 C
  • Maximum Gate Emitter Voltage
    20 V
  • Mounting Styles
    Chassis Mount
  • Factory Pack QuantityFactory Pack Quantity
    1
  • Unit Weight
    5.783519 oz
  • Package
    Bulk
  • Current-Collector (Ic) (Max)
    80 A
  • Base Product Number
    APTGL60
  • Mfr
    Microchip Technology
  • Product Status
    Active
  • Collector-Emitter Breakdown Voltage
    1.2 kV
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -40°C ~ 175°C (TJ)
  • Series
    -
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    175 °C
  • Min Operating Temperature
    -40 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    280 W
  • Configuration
    Dual
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Dual
  • Power - Max
    280 W
  • Input
    Standard
  • Collector Emitter Voltage (VCEO)
    1.2 kV
  • Max Collector Current
    80 A
  • Current - Collector Cutoff (Max)
    250 µA
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Input Capacitance

    The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

    2.77 nF
  • Vce(on) (Max) @ Vge, Ic
    2.25V @ 15V, 50A
  • Continuous Collector Current
    80
  • IGBT Type
    Trench Field Stop
  • NTC Thermistor

    resistors with a negative temperature coefficient, which means that the resistance decreases with increasing temperature.

    Yes
  • Input Capacitance (Cies) @ Vce
    2.77 nF @ 25 V
  • Product
    IGBT Silicon Modules
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