APT40GL120JU3

Microchip Technology APT40GL120JU3

Part No:

APT40GL120JU3

Datasheet:

-

Package:

ISOTOP-4

AINNX NO:

31026231-APT40GL120JU3

Description:

IGBT Modules DOR CC0039View in Development Tools Selector

Products specifications
  • Lifecycle Status
    Production (Last Updated: 2 months ago)
  • Package / Case
    ISOTOP-4
  • Mounting Type
    Chassis, Stud Mount
  • Mount
    Chassis, Screw, Stud
  • Number of Pins
    4
  • Supplier Device Package
    SOT-227
  • RoHS
    Details
  • Collector- Emitter Voltage VCEO Max
    1200 V
  • Pd - Power Dissipation
    220 W
  • Minimum Operating Temperature
    - 55 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 175 C
  • Maximum Gate Emitter Voltage
    20 V
  • Mounting Styles
    SMD/SMT
  • Factory Pack QuantityFactory Pack Quantity
    1
  • Package
    Bulk
  • Current-Collector (Ic) (Max)
    65 A
  • Base Product Number
    APT40GL120
  • Mfr
    Microchip Technology
  • Product Status
    Active
  • Collector-Emitter Breakdown Voltage
    1.2 kV
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 175°C (TJ)
  • Series
    -
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    220 W
  • Configuration
    Single
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    220
  • Power - Max
    220 W
  • Input
    Standard
  • Collector Emitter Voltage (VCEO)
    2.25 V
  • Max Collector Current
    65 A
  • Current - Collector Cutoff (Max)
    250 µA
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Input Capacitance

    The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

    1.95 nF
  • Vce(on) (Max) @ Vge, Ic
    2.25V @ 15V, 35A
  • Continuous Collector Current
    65
  • IGBT Type
    Trench Field Stop
  • NTC Thermistor

    resistors with a negative temperature coefficient, which means that the resistance decreases with increasing temperature.

    No
  • Input Capacitance (Cies) @ Vce
    1.95 nF @ 25 V
  • Product
    IGBT Silicon Modules
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