MagnaChip MDD5N40RH

Mount

Surface Mount

Number of Pins

3

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

Unknown

PPAP

Unknown

Category

Power MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

400

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

3.4

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Typical Gate Charge @ Vgs (nC)

9@10V

Typical Gate Charge @ 10V (nC)

9

Typical Input Capacitance @ Vds (pF)

290@25V

Maximum Power Dissipation (mW)

45000

Typical Fall Time (ns)

30

Typical Rise Time (ns)

25

Typical Turn-Off Delay Time (ns)

20

Typical Turn-On Delay Time (ns)

12

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

Surface Mount

Package Height

2.39(Max)

Package Width

6.1

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-252

Supplier Package

DPAK

Lead Shape

Gull-wing

Number of Elements

1

RoHS

Compliant

Turn Off Delay Time

It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

20 ns

Package Description

,

Reflow Temperature-Max (s)

NOT SPECIFIED

Rohs Code

Yes

Manufacturer Part Number

MDD5N40RH

Manufacturer

MagnaChip Semiconductor Ltd

Part Life Cycle Code

Active

Ihs Manufacturer

MAGNACHIP SEMICONDUCTOR LTD

Risk Rank

5.72

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tape and Reel

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

150 °C

Min Operating Temperature

-55 °C

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

45 W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

Pin Count

a count of all of the component leads (or pins)

3

Configuration

Single

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

45 W

Turn On Delay Time

Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

12 ns

Continuous Drain Current (ID)

3.4 A

Gate to Source Voltage (Vgs)

30 V

Input Capacitance

The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

290 pF

Channel Type

N

Drain to Source Resistance

1.6 Ω

Width

6.22 mm

Height

2.39 mm

Length

6.73 mm

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No