GeneSiC Semiconductor G3R40MT12J

Mounting Type

Surface Mount

Package / Case

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Supplier Device Package

TO-263-7

Continuous Drain Current Id

75A

Package

Tube

Base Product Number

G3R40

Current - Continuous Drain (Id) @ 25℃

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V

Mfr

GeneSiC Semiconductor

Power Dissipation (Max)

374W (Tc)

Product Status

Active

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

2.7 V

Pd - Power Dissipation

330 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 175 C

Vgs - Gate-Source Voltage

- 5 V, + 15 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

88 nC

Rds On - Drain-Source Resistance

40 mOhms

Id - Continuous Drain Current

66 A

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 175°C (TJ)

Series

G3R™

Technology

SiCFET (Silicon Carbide)

Number of Channels

1 Channel

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

374W

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

48mOhm @ 35A, 15V

Vgs(th) (Max) @ Id

2.69V @ 10mA

Input Capacitance (Ciss) (Max) @ Vds

2929 pF @ 800 V

Gate Charge (Qg) (Max) @ Vgs

106 nC @ 15 V

Drain to Source Voltage (Vdss)

1200 V

Vgs (Max)

±15V

Channel Type

N Channel

FET Feature

-