GeneSiC Semiconductor G2R120MT33J

Mounting Type

Surface Mount

Package / Case

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Supplier Device Package

TO-263-7

Mfr

GeneSiC Semiconductor

Package

Tube

Product Status

Active

Current - Continuous Drain (Id) @ 25℃

35A

Drive Voltage (Max Rds On, Min Rds On)

20V

Power Dissipation (Max)

-

Base Product Number

G2R120

Continuous Drain Current Id

35A

Vds - Drain-Source Breakdown Voltage

3.3 kV

Typical Turn-On Delay Time

96 ns

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

366 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 175 C

Vgs - Gate-Source Voltage

- 5 V, + 20 V

Unit Weight

0.056438 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

SMD/SMT

Forward Transconductance - Min

5.8 S

Channel Mode

Enhancement

Manufacturer

GeneSiC Semiconductor

Brand

GeneSiC Semiconductor

Qg - Gate Charge

130 nC

Rds On - Drain-Source Resistance

120 mOhms

RoHS

Details

Typical Turn-Off Delay Time

35 ns

Id - Continuous Drain Current

34 A

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 175°C (TJ)

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tube

Type

SiC MOSFET

Subcategory

MOSFETs

Configuration

Single

Number of Channels

1 Channel

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

402W

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

156mOhm @ 20A, 20V

Vgs(th) (Max) @ Id

-

Input Capacitance (Ciss) (Max) @ Vds

3706 pF @ 1000 V

Gate Charge (Qg) (Max) @ Vgs

145 nC @ 20 V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

26 ns

Drain to Source Voltage (Vdss)

3300 V

Vgs (Max)

+25V, -10V

Product Type

a group of products which fulfill a similar need for a market segment or market as a whole.

MOSFET

Transistor Type

MOSFET

Channel Type

N Channel

FET Feature

-

Product

MOSFET

Product Category

a particular group of related products.

MOSFET